RF-E 02
电场探头(30MHz-3GHz)
![RF-E 02, 电场探头(30MHz-3GHz)](/fileadmin/Bilder300/Disturbance emission_near field probe_RF-E 02_function_en_wPZ.png?v=1738738804296)
![Probe head](/fileadmin/Bilder300/2014.11.14 Sondenkopf RF-E 02_wPZ.jpg?v=1738738806833)
Short description
RF-E 02型近场探头用于测量总线结构、较大的元器件或者供电表面产生的耦合电场。探头下方的电极面积大约是2 cm x 5 cm。该探头用于在距离模块1cm到2 cm的位置检测。
The RF-E 02 is a passive near-field probe. In principle it has the same structure as the RF-E 05 and RF-E 10 probes. When measuring, the bottom surface of the probe head is positioned close to the measured object. This allows the E-field emitted by an assembly to be detected. To achieve a higher resolution, only the tip of the probe head should be held toward the measured object. The near-field probe is small and handy. It has a current attenuating sheath and, therefore, is electrically shielded. It can be connected to a spectrum analyzer or an oscilloscope with a 50 Ω input. The H-field probe does not have an internal terminating resistance of 50 Ω.