XF-E 09s
电场探头(30MHz-6GHz)
![XF-E 09s, 电场探头(30MHz-6GHz)](/fileadmin/Bilder300/Disturbance emission_near field probe_XF-E 09s_function_en_wPZ.png?v=1721026804401)
![Probe head](/fileadmin/Bilder300/2014 Sondenkopf XF-E 09 s_wPZ.jpg?v=1721026806847)
Short description
这种近场探头可以检测受测对象(IC)耦合产生的电场。探头的侧面采用屏障设计,所以侧面作用的电场不影响测量结果。这种近场探头的灵敏度允许在0.5到10mm的距离检测集成电路及其他电子模块的电场。
The XF-E 09s is a passive near-field probe. In principle it has the same structure as the XF-E 04s probe. To measure, the E-field probe is positioned above or onto components and printed circuit boards. It has a current attenuating sheath and, therefore, its upper half is electrically shielded. It can be connected to a spectrum analyzer or an oscilloscope with a 50 Ω input. The E-field probe has an internal terminating resistance.